منابع مشابه
Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers
Top-gated epitaxial-graphene nanoribbon (GNR) field-effect transistors on SiC wafers were fabricated and characterized at room temperature. The devices exhibited extremely high current densities ( 10 000 mA/mm) due to the combined advantages of the one-dimensionality of GNRs and the SiC substrate. These advantages included good heat dissipation as well as the high optical phonon energy of the G...
متن کاملTunable photoresponse of epitaxial graphene on SiC
We report photoresponse measurements from two comparable epitaxial graphene (EG) devices of different thicknesses (2-layer vs. 10-layer EG) made on SiC substrates. An asymmetric metal contact scheme was used in a planar configuration to form a Ti/EG/Pd junction. By moving the laser illumination across the junction, we observed an increased photocurrent signal resulting from local enhancement of...
متن کاملChemically resolved interface structure of epitaxial graphene on SiC(0001).
Atomic-layer 2D crystals have unique properties that can be significantly modified through interaction with an underlying support. For epitaxial graphene on SiC(0001), the interface strongly influences the electronic properties of the overlaying graphene. We demonstrate a novel combination of x-ray scattering and spectroscopy for studying the complexities of such a buried interface structure. T...
متن کاملIntercalated europium metal in epitaxial graphene on SiC
X-ray magnetic circular dichroism (XMCD) reveals the magnetic properties of intercalated europium metal under graphene on SiC(0001). The intercalation of Eu nanoclusters (average size 2.5 nm) between graphene and SiC substate are formed by deposition of Eu on epitaxially grown graphene that is subsequently annealed at various temperatures while keeping the integrity of the graphene layer. Using...
متن کاملTemperature-dependence of Epitaxial Graphene Formation on SiC(0001)
The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to begin at about 1150°C, with the overall step-terrace arrangement of the surface being preserved but w...
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ژورنال
عنوان ژورنال: ECS Transactions
سال: 2019
ISSN: 1938-6737
DOI: 10.1149/1.3119535